论文标题
la $ _ {1-x} $ sr $ _x $ co $ _ {1-y} $ nb $ _y $ o $ $ $ $ _3 $薄膜的结构和运输属性
Structural and transport properties of La$_{1-x}$Sr$_x$Co$_{1-y}$Nb$_y$O$_3$ thin films
论文作者
论文摘要
我们介绍LA $ _ {1-x} $ sr $ _x $ _x $ _x $ _ {1-y} $ nb $ _y $ _y $ o $ $ $ _3 $（$ y = $ y = $ y = $ x = $ x = $ x = $ y = $ 0.15和$ 0.15和$ x = $ 0.3）在（001）的cer siss corties cortional cortigation latteram上，和拉伸应变。高分辨率X射线衍射测量值，包括$θ$ -2 $θ$扫描，$φ$ -SCAN和相互空间映射，确认单相；四倍对称；良好的沉积薄膜质量。原子力显微照片证实，这些薄膜在$ \ sim $ 0.5---7〜nm的范围内具有较小的均方根粗糙度。我们观察到由于降低的晶体对称性，与散装相比，由于较低的晶体对称性观察到了其他拉曼活跃模式。更有趣的是，与体积相比，由于诱导的晶格菌株而导致的薄膜变得绝缘，但与散装相比，薄膜变得绝缘，但是由于较大的压缩应变膜的电导率显着增加，因为$ p-d $杂交的程度较高，并且在Fermi水平接近Fermi水平的带宽下降。
We present the structural and transport properties of La$_{1-x}$Sr$_x$Co$_{1-y}$Nb$_y$O$_3$ ($y=$ 0.1 and $x=$ 0; $y=$ 0.15 and $x=$ 0.3) thin films grown on (001) orientated single crystalline ceramic substrates to investigate the effect of lattice induced compressive and tensile strain. The high resolution x-ray diffraction measurements, including $θ$-2$θ$ scan, $Φ$-scan, and reciprocal space mapping, affirm single phase; four-fold symmetry; good quality of deposited thin films. The atomic force micrographs confirm that these films have small root mean square roughness in the range of $\sim$0.5--7~nm. We observed additional Raman active modes in the films owing to the lowered crystal symmetry as compared to the bulk. More interestingly, the temperature dependent dc-resistivity measurements reveal that films become insulating due to induced lattice strain in comparison to bulk, however for the larger compressive strained films conductivity increase significantly owing to the higher degree of $p-d$ hybridization and reduction in bandwidth near the Fermi level.
