论文标题
硅中强大量子点的制造过程和失败分析
Fabrication process and failure analysis for robust quantum dots in silicon
论文作者
论文摘要
我们提出了一个改进的制造过程，用于在SI/SIGE异质结构上重叠铝门量子点器件，该铝量量子点设备融合了低温胶质间氧化，门氧化门的热退火，芯片静电放电（ESD）保护以及优化的热预算互连处理过程。此过程减少了闸门泄漏，ESD损坏，铝的损伤以及设备互连中不希望合金的形成。另外，随着设备几何形状的变化，横截面扫描透射电子显微镜（Stem）图像阐明了活动区域中的栅极电极形态。我们表明，重叠的铝门层同质符合其下面的拓扑，独立于门的几何形状，并识别栅极几何形状中的临界尺寸，其中模式转移变为非理想，从而导致设备故障。
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.
