学术文献库

Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a \emph{p}-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobility comes from a combination of low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest this could be a general advantage of non-oxides for \emph{p}-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and shows that it exceeds by one order of magnitude that of established \emph{p}-type transparent conductors, confirming the potential of this material.