论文标题
移动空缺的备忘录中的非线性效应
Nonlinear effects in memristors with mobile vacancies
论文作者
论文摘要
由于任何材料中空缺的局部浓度都是有限的，因此它们的运动必须伴随非线性效应。在这里，我们在一个简单的磁场驱动空缺运动中寻找这种效果，从而在分析上使用不可渗透的非线性边界条件求解相应的非线性汉堡方程。我们发现，在Memristor的稳定（``On''/````'''）状态之间切换了阻力的非单调放松；在质量不同的膜厚度依赖性（在应用电流下）和放松时间（在没有电流下）。我们的精确解决方案可以用作模拟更复杂的Memristor模型的有用基准。
Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving the corresponding nonlinear Burgers' equation with impermeable nonlinear boundary conditions analytically. We find non-monotonous relaxation of the resistance while switching between the stable (``on''/``off'') states of the memristor; and qualitatively different film thickness dependencies of switching time (under applied current) and relaxation time (under no current). Our exact solution can serve as a useful benchmark for simulations of more complex memristor models.
