论文标题
氮化硼封装的多末端电子运输tis $ _3 $纳米片
Multi-terminal electronic transport in boron nitride encapsulated TiS$_3$ nanosheets
论文作者
论文摘要
我们已经研究了电气传输，这是由六角硼（H-BN）封装Trisulfide（TIS $ _3 $）板组成的多末端设备中载体密度，温度和偏置的函数。通过与H-BN的封装，我们观察到金属行为和高电子迁移率。低于$ \ sim $ 60 k的电阻增加，并且在差异电阻中具有类似平稳的特征的非线性传输与预期的电荷密度波（CDW）形成一致。重要的是，可以通过后门控制CDW相的临界温度和阈值。
We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS$_3$) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below $\sim$60 K an increase in the resistance, and non-linear transport with plateau-like features in the differential resistance are present, in line with the expected charge density wave (CDW) formation. Importantly, the critical temperature and the threshold field of the CDW phase can be controlled through the back-gate.
