论文标题
$^{233} $ u源的alpha光谱特征，$^{229 \ text {（m）}} $ th生产
Alpha spectrometric characterization of thin $^{233}$U sources for $^{229\text{(m)}}$Th production
论文作者
论文摘要
将四种不同的技术应用于$^{233} $ u alpha后退离子源的生产，提供$^{229} $ th ions。将它们使用$^{229} $ th离子离子的最小能量扩散进行比较，并使用发射的alpha颗粒作为指示。使用了分子镀层的技术，需求喷墨打印，化学功能化硅表面上的稀硝酸溶液的螯合以及对钝化钛表面上的自我吸附。所有制造的源均通过使用α光谱法，放射学成像和扫描电子显微镜来表征。通过从$^{232} $ u后乘离子源收集$^{228} $ th离子离子通过自我吸附和分子电镀准备的$^{232} $ U后乘离子来获得估计后坐力离子速率的直接验证。螯合和基于自动吸附的方法似乎是准备单色后座离子的后坐离子源的制备。
Four different techniques were applied for the production of $^{233}$U alpha recoil ion sources, providing $^{229}$Th ions. They were compared with respect to a minimum energy spread of the $^{229}$Th recoil ions, using the emitted alpha particles as an indicator. The techniques of Molecular Plating, Drop-on-Demand inkjet printing, chelation from dilute nitric acid solution on chemically functionalized silicon surfaces, and self-adsorption on passivated titanium surfaces were used. All fabricated sources were characterized by using alpha spectrometry, radiographic imaging, and scanning electron microscopy. A direct validation for the estimated recoil ion rate was obtained by collecting $^{228}$Th recoil ions from $^{232}$U recoil ion sources prepared by self-adsorption and Molecular Plating. The chelation and the self-adsorption based approaches appear most promising for the preparation of recoil ion sources delivering monochromatic recoil ions.
