论文标题
Gainasp太阳能电池的辐射硬度和辐照后再生行为
Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells
论文作者
论文摘要
最近的发展已增加对太阳能电池的需求，对辐射损伤的耐受性增加。为了研究与INP相匹配的1 MeV电子辐照的特异性辐射损伤，用于不同的INP和P含量，采用了基于模拟的分析：通过拟合量子效率和辐照之前和之后的量子效率和敞开电路电压，检测了诱导的寿命变化。此外，研究了GEO任务（60°C和AM0照明）在典型的卫星工作条件下再生过程中辐射损伤的减少。辐射后再生后观察到辐射损伤明显减少。这种再生效应对于增加INP分数的效果更强。事实证明，在再生216小时后，可以用1*10 $^{ - 5} $ cm $^2 $/s在GAAS和7*10 $^{ - 7*10 $^{ - 7} $ cm $^2 $/s之间来描述辐射诱导的缺陷重组系数216小时后用1 meV电子辐照的缺陷重组系数。结果表明，GainASP是辐射硬空间太阳能电池的有前途的材料。
Recent developments have renewed the demand for solar cells with increased tolerance to radiation damage. To investigate the specific irradiation damage of 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying In and P contents, a simulation based analysis is employed: by fitting the quantum efficiency and open-circuit voltage simultaneously before and after irradiation, the induced changes in lifetime are detected. Furthermore, the reduction of irradiation damage during regeneration under typical satellite operating conditions for GEO missions (60°C and AM0 illumination) is investigated. A clear decrease of the radiation damage is observed after post irradiation regeneration. This regeneration effect is stronger for increasing InP-fraction. It is demonstrated that the irradiation induced defect recombination coefficient for irradiation with 1 MeV electrons after regeneration for 216 hours can be described with a linear function of InP-fraction between 1*10$^{-5}$ cm$^2$/s for GaAs and 7*10$^{-7}$ cm$^2$/s for InP. The results show that GaInAsP is a promising material for radiation hard space solar cells.
