论文标题

NaCl辅助底物依赖性2D平面成核MOS2的生长

NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2

论文作者

Singh, Aditya, Moun, Monika, Sharma, Madan, Barman, Arabinda, Kapoor, Ashok Kumar, Singh, Rajendra

论文摘要

在不同底物上的大规模,均匀,易于转移和高度结晶的单层(1L)钼(MOS2)的合成是一项挑战,可以决定其对光电设备应用的适用性。本文中,我们报告了NaCl辅助的化学蒸气沉积(CVD)合成高质量MOS2在非晶,结晶和分层底物上的合成。光学显微镜和拉曼光谱表明,蓝宝石和SIO2/Si是适合大型1L-MOS2薄片生长的底物,而云母对于大区域连续膜非常有用。在蓝宝石上1L-MOS2的光致发光光谱中,主要的A激子峰(与k点处的直接带隙有关)的主要A激子峰(与直接带隙有关)相对较小。但是,其他底物上的1L-MOS2,尤其是在石英和裸si上的晶体质量差。该研究表明,NaCl有助于在基板上形成种子启动子,例如Na2s和/或Na2SO4的水溶性层,这有助于MOS2的2D平面成核。由于其易于水溶性,这种中间播种层的形成也有助于层转移。该研究可用于在不同底物上大规模合成1L-MOS2,用于高性能光电设备。

Synthesis of large-scale, uniform, easily transferable, and highly crystalline monolayer (1L) molybdenum disulfide (MoS2) on different substrates is a challenge and could decide its suitability for opto-electronic device applications. Herein, we report a facile NaCl-assisted Chemical Vapor Deposition (CVD) synthesis of high-quality MoS2 on amorphous, crystalline and layered substrates. Optical microscopy and Raman spectroscopy show that sapphire and SiO2/Si are suitable substrates for large 1L-MoS2 flakes growth, while mica is excellent for large-area continuous films. Comparatively lesser full-width-at-half-maximum (FWHM) of predominant A exciton peak (which is associated with direct band gap at K point) in photoluminescence spectra of 1L-MoS2 on sapphire suggests its high crystalline quality. However, 1L-MoS2 on other substrates, especially on quartz and bare Si show poor crystalline quality. The study depicts that the NaCl assists in the formation of seeding promoter such as water-soluble layer of Na2S and/or Na2SO4 on the substrate that helps in 2D planar nucleation of MoS2. The formation of such intermediate seeding layers also helps in layer transfer owing to its easy water solubility. The study could be utilized for large-scale synthesis of 1L-MoS2 on different substrates for high-performance optoelectronic devices.

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