论文标题
底物引起的光学各向异性单层MOS $ _2 $
Substrate Induced Optical Anisotropy in Monolayer MoS$_2$
论文作者
论文摘要
从单层MOS $ _2 $在A-Plane（11-20）蓝宝石底物上生长的单层MOS $ _2 $，在紫外线可见的波长范围内检测到了平面光学各向异性。基于测量的光学各向异性，已经确定了沿着基础蓝宝石底物的普通和非凡方向极化的光学转变之间的能量差。结果全面证实了介电环境对电子带结构的修改和单层MOS $ _2 $最近通过第一个原理计算预测的单层结合能。这项研究的输出提出对称性是二维材料介电工程的新自由度。
In-plane optical anisotropy has been detected from monolayer MoS$_2$ grown on a-plane (11-20) sapphire substrate in the ultraviolet-visible wavelength range. Based on the measured optical anisotropy, the energy differences between the optical transitions polarized along the ordinary and extraordinary directions of the underlying sapphire substrate have been determined. The results corroborate comprehensively with the dielectric environment induced modification on the electronic band structure and exciton binding energy of monolayer MoS$_2$ predicted recently by first principle calculations. The output of this study proposes the symmetry as a new degree of freedom for dielectric engineering of the two-dimensional materials.
