论文标题
双极旋转厅纳米振荡器
Bipolar spin Hall nano-oscillators
论文作者
论文摘要
我们展示了一种新型的自旋霍尔纳米振荡器（SHNO），该旋转霍尔纳米振荡器（SHNO）允许在恒定磁场处使用双极直流电流在扩展的Gigahertz频率上有效调整磁性自动振荡。这是通过用铂层层堆叠两个不同的铁磁层来实现的。在此设备中，在改变直流电流的极性时，切换了在铂层顶部和底部界面上积累的自旋极化电子的方向。结果，驱动大幅度自动振荡所需的有效抗阻尼可以出现在顶部或底部磁性层。可以通过将两种具有足够不同饱和磁化的材料组合来对几种gigahertz进行自动振荡频率调整。在这里，我们表明，Nife和CoFEB的组合可以导致自动振荡频率的3 GHz偏移。躁郁症SHNO可能会为神经形态计算应用带来增强的同步功能。
We demonstrate a novel type of spin Hall nano-oscillator (SHNO) that allows for efficient tuning of magnetic auto-oscillations over an extended range of gigahertz frequencies, using bipolar direct currents at constant magnetic fields. This is achieved by stacking two distinct ferromagnetic layers with a platinum interlayer. In this device, the orientation of the spin polarised electrons accumulated at the top and bottom interfaces of the platinum layer is switched upon changing the polarity of the direct current. As a result, the effective anti-damping required to drive large amplitude auto-oscillations can appear either at the top or bottom magnetic layer. Tuning of the auto-oscillation frequencies by several gigahertz can be obtained by combining two materials with sufficiently different saturation magnetization. Here we show that the combination of NiFe and CoFeB can result in 3 GHz shifts in the auto-oscillation frequencies. Bipolar SHNOs as such may bring enhanced synchronisation capabilities to neuromorphic computing applications.
