论文标题
Yttria稳定的氧化锆中错位的化学表征
Chemical characterization of dislocation in yttria-stabilized zirconia
论文作者
论文摘要
这项研究表明，在升高温度下的机械变形过程中，在脱位形成空间电荷层。高密度的位错线在较大的单晶Y2O3中通过单轴压缩在升高的温度下稳定ZRO2（YSZ）。通过透射电子显微镜（TEM）证明了错位的产生。然后，使用能量分散性X射线光谱（EDS）和电子能量损耗光谱（EEL）来探索偏离脱位线和远离脱位线的组成的变化。同样，澄清说，位错线上掺杂原子（yttrium）的分离是由高温退火引起的。比较有或没有热退火的组合物变化，我们研究了掺杂系统中位错线形成的空间电荷层。
This study demonstrates that a space charge layer is formed on dislocation during mechanical deformation at elevated temperature. High density of dislocation lines is generated in bulk single crystalline Y2O3 stabilized ZrO2 (YSZ) by uniaxial compression at elevated temperature. The creation of dislocation is proven with transmission electron microscopy (TEM). Then, energy-dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) are used to explore the changes in the composition on and away from the dislocation lines. Also, it is clarified that segregation of dopant atoms (yttrium) on the dislocation line is induced by high temperature annealing. Comparing the compositional variations with and without thermal annealing, we study the space charge layer formed on dislocation lines in a doped system.
