论文标题
INN PA-MOCVD的过饱和模型
Supersaturation model for InN PA-MOCVD
论文作者
论文摘要
我们开发了一种用于等离子辅助金属化学蒸气沉积Inn的热力学过饱和模型。该模型基于鉴定与血浆生成的原子氮离子的化学组合。分析了通过PA-MOCVD生长的Inn膜，并具有不同的输入前体的输入流。拉曼光谱，X射线衍射和原子力显微镜提供了有关生长膜的结构特性和表面形态的反馈。分析了生长参数变化对超饱和的影响。在变化的生长参数上生长的Inn膜在超饱和值中导致相同的结构特性和表面形态。
We developed a thermodynamic supersaturation model for plasma-assisted metalorganic chemical vapor deposition of InN. The model is based on the chemical combination of indium with plasma-generated atomic nitrogen ions. Indium supersaturation was analyzed for InN films grown by PA-MOCVD with varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction, and atomic force microscopy provided feedback on structural properties and surface morphology of grown films. Growth parameter variation effect on In supersaturation was analyzed. InN films grown at varying growth parameters resulting in the same In supersaturation value exhibit similar structural properties and surface morphology.
