论文标题

SN(PB)中的量子副态和关键行为$ _ 2 $ P $ _2 $ S(SE)$ _ 6 $ FERREELECTRICS

Quantum paraelectric state and critical behavior in Sn(Pb)$_2$P$_2$S(Se)$_6$ ferroelectrics

论文作者

Zamaraite, I., Liubachko, V., Yevych, R., Oleaga, A., Salazar, A., Dziaugys, A., Banys, J., Vysochanskii, Yu.

论文摘要

SN(PB)中的偶极订购$ _ 2 $ P $ _2 $ S(SE)$ _ 6 $可以通过化学替代来调整材料,从而在相位图的不同部分上实现铁电量子相变和量子玻璃或松弛剂类型现象。 GE杂质的引入提高了相转换的温度,并启动了更明显的ISIN类型类型的临界异常,sn $ _2 $ _2 $ p $ _2 $ s $ _6 $ crystal,不会改变lifshitz point $ x _ {\ textrm {lpm {lp} $ in in lifshitz point sn $ _2 $ p $ _2 $(se $ _x $ s $ _ {1-x} $)$ _ 6 $混合晶体,诱导量子paraelectrics pb $ _2 $ _2 $ _2 $ _2 $ _2 $ s $ _6 $ _6 $ and inthomogeneous Polar Ordor On Hhomomogeneous Polar Ordoring in Hymomogeneous Polar Ordering in tass paraelectrics pb $ _2 (pb $ _ {0.7} $ sn $ _ {0.3} $)$ _ 2 $ p $ _2 $ s(se)$ _ 6 $ crystals。对于Pb $ _2 $ P $ _2 $ S $ _6 $ CRYSTAL,量子关键制度中介电易感性的实际部分变化为$ 1/T^2 $,而不是单司材料的预期$ 1/T^3 $行为。这可以通过在SN(PB)的半导体材料中的筛选现象进行部分解释,$ _ 2 $ _ 2 $ p $ _2 $ _2 $ s(se)$ _ 6 $系统,削弱了远距离电动偶极相互作用,并且在高温下,在高温下,在较高的温度下(通过热力范围进行了一次性范围),与一个案例相似的是,与一项相似的案例相似。在低温下,PB $ _2 $ P $ _2 $ S $ _6 $ CRYCRAL中的量子关键行为可以通过极性和抗极性波动之间的非线性耦合来建立。 PB $ _2 $ _2 $ _2 $ _6 $ CRYCRAL中的GE杂质引起的热导率的提高,这是通过软光学声子的弱化声子共振散射来解释的,这是由于Ferroelectric Polar Polar Polar Polar Clusters的出现。

The dipole ordering in Sn(Pb)$_2$P$_2$S(Se)$_6$ materials may be tuned by chemical substitution realizing a ferroelectric quantum phase transition and quantum glassy or relaxor type phenomena on different parts of the phase diagram. The introduction of Ge impurity increases the temperature of the phase transitions and initiates a more pronounced Ising type critical anomaly in Sn$_2$P$_2$S$_6$ crystal, does not shift the coordinate of the Lifshitz point $x_{\textrm {LP}}$ in Sn$_2$P$_2$(Se$_x$S$_{1-x}$)$_6$ mixed crystals, induces the appearance of a ferroelectric phase transition in quantum paraelectrics Pb$_2$P$_2$S$_6$ and inhomogeneous polar ordering in (Pb$_{0.7}$Sn$_{0.3}$)$_2$P$_2$S(Se)$_6$ crystals. For Pb$_2$P$_2$S$_6$ crystal, the real part of the dielectric susceptibility in the quantum critical regime varies as $1/T^2$ instead of the expected $1/T^3$ behavior for uniaxial materials. This can be partially explained by a screening phenomenon in the semiconductor materials of the Sn(Pb)$_2$P$_2$S(Se)$_6$ system, which weakens the long range electric dipole interactions, and also provides, at high temperatures, a critical behavior near the Lifshitz point (studied by thermal diffusivity) similar to the one predicted in the case of systems with short range interactions. At low temperatures, a quantum critical behavior in Pb$_2$P$_2$S$_6$ crystal can be established by the nonlinear coupling between polar and antipolar fluctuations. An increase in thermal conductivity is induced by Ge impurity in Pb$_2$P$_2$S$_6$ crystal, which is explained through the weakening of the acoustic phonons resonance scattering by soft optic phonons because of the appearance of ferroelectric phase polar clusters.

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