论文标题
UFSD中的受体去除的实验研究
Experimental Study of Acceptor Removal in UFSD
论文作者
论文摘要
用中子和质子辐照后，超快速硅探测器（UFSD）的性能因降低薄层以下的薄层中的受体去除而损害了造成增益的连接处。通过掺杂浓度的C-V测量以及使用带电颗粒的电荷收集测量的测量，对此效果进行了测试。我们发现偏置电压之间的完美线性相关性耗尽了用C-V确定的增益层和偏置电压以收集定义的电荷，并通过电荷收集来测量。提出了此相关性有用性的一个示例。
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
