论文标题
由电场控制的激子 - 果龙疗法
Exciton-polariton interference controlled by electric field
论文作者
论文摘要
在拓扑绝缘体和旋转器设备中，以电子哈密顿量的波形术语线性起着重要作用。在这里，我们演示了外部电场如何控制宽GAAS量子井中激子哈密顿量中的线性in-in-K项的大小。通过差异反射光谱研究了该术语对高质量样品中应用场的依赖性。实验数据与使用半经典非本地介电响应模型的计算结果之间的出色一致性证实了该方法的有效性，并为实现激子达塔和DAS晶体管的实现铺平了道路。与Datta和Das提出的自旋轨道晶体管完全类似[Appl。物理。 Lett。 {\ bf 56}，665（1990）]，通过在量子孔层的平面中应用具有非零分量的电场，可以实现具有GAAS膜中向前和向后传播的激子极化子的正和负干扰之间的切换。
Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.
