论文标题
在7-1100 K范围内的直接光激发下，相关氧气碳对相关的氧气碳对发光的温度影响
Temperature effects in luminescence of associated oxygen-carbon pairs in hexagonal boron nitride under direct optical excitation within 7-1100 K range
论文作者
论文摘要
我们已经研究了在7-1100 K范围内的六角形硝化硼的微晶粉末中光致发光强度（PL）强度的温度依赖性。在基于Impurity（Oncn）配合物的相关供体对供体对的能量水平中，已在7-1100 K的范围内分析了所获得的结果。 T <200 K处的发光增强过程，外部热激活淬灭的两个独立通道是样品直接（4.26 eV）兴奋下可观察到的发光机制的典型特征。已经表明，在t> 220 K时，当直接激发时，样品会降低PL强度，因为中心（122 MeV）的供体水平的热离子化过程（122 MeV）和CN-Center（1420 MEV）的深度受体水平作为（ONCN）的一部分（1420 MEV）。激活能量为15 MEV的温度增强区域是由于结合的Wannier-mott激子的衰减，然后将激发转移到相关的供体 - 受体对对。
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of energy levels of associated donor-acceptor pairs based on impurity (ONCN) complexes. Luminescence enhancement processes at T<200 K and two independent channels of external thermal activation quenching are typical of the observable luminescence mechanisms under direct (4.26 eV) excitations of the samples. It has been shown that, at T>220 K, when directly excited, the samples diminish the PL intensity because of the processes of thermal ionization of the donor level of the ON-center (122 meV) and the deep acceptor level of the CN-center (1420 meV) as parts of the (ONCN)-complex. The temperature enhancement region with an activation energy of 15 meV is due to the decay of a bound Wannier-Mott exciton followed by transfer of excitation to the associated donor-acceptor pair.
