论文标题
平均体积反射角
Mean volume reflection angle
论文作者
论文摘要
通过弯曲晶体的高能电荷粒子的平均体积反射角表示为涉及单个晶体内有效平面电位的积分。讨论了对积极和负电荷的颗粒以及硅晶体方向的影响（110）和（111）。给出了粒子能量$ e $与水晶弯曲半径$ r $的比例$ e/r $的近近额外扩展。对于带正电荷的粒子，平均体积反射角对$ e/r $的依赖性被证明大致是线性的，而对于带负电荷的粒子，线性行为通过$ e/r $ $相关的对数因子进行了修改。最新的实验数据面临基于常用原子电位的预测。
The mean volume reflection angle of a high-energy charged particle passing through a bent crystal is expressed as an integral involving the effective interplanar potential over a single crystal period. Implications for positively and negatively charged particles, and silicon crystal orientations (110) and (111) are discussed. A generic next-to-leading-order expansion in the ratio $E/R$ of the particle energy $E$ to the crystal bending radius $R$ is given. For positively charged particles, the dependence of the mean volume reflection angle on $E/R$ proves to be approximately linear, whereas for negatively charged particles the linear behaviour is modified by an $E/R$-dependent logarithmic factor. Up-to-date experimental data are confronted with predictions based on commonly used atomic potentials.
