论文标题
点缺陷中零声子线的理论极化
Theoretical polarization of zero phonon lines in point defects
论文作者
论文摘要
在量子技术中，半导体中的点缺陷变得越来越重要。了解零声子线的频率，强度和极化很重要。最后两个属性是本文的主题。我提出了一种计算这些特性的方法，并显示了从地面和激发态使用波函数的重要性。该方法的有效性在4H-SIC中的分裂率上得到了证明。在这里，计算出的极化和寿命与实验测量非常吻合。通常，此方法可以帮助识别点缺陷并估计合适的应用。
In quantum technologies, point defects in semiconductors are becoming more significant. Understanding the frequency, intensity, and polarization of the zero phonon line is important. The last two properties are the subject of this paper. I present a method for calculating these properties and show the importance of using wave functions from both the ground and excited state. The validity of this method is demonstrated on the divacancy in 4H-SiC. Here, the calculated polarization and lifetimes are in excellent agreement with experimental measurements. In general, this method can help to identify point defects and estimate suitable applications.
