论文标题
使用拉曼光谱法独立硅纳米线的导热率
Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy
论文作者
论文摘要
尤其是纳米线的低维系统已经表现出出色的光学和电子特性。了解半导体纳米线中的热性能对于它们在电子设备中的应用非常重要。在本研究中，使用拉曼光谱法估计了独立硅纳米线（NW）的热导率。该技术的优点是光源（激光）可以用作加热和激发源。在温度和激光功率方面，独立硅NW的一阶拉曼峰位置的变化。对有效的激光功率的批判性分析是由裸露的硅NW吸收的，详细的拉曼研究以及硅NW中纵向热分布的概念，估计估计直径为112 nm的独立硅NW的热导率估计为〜53 W/m.k。
Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K.
