论文标题
晶格扭曲对透明氧化物半导体BA1-XSRXSNO3实心溶液膜的电子和热传输特性的影响
Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films
论文作者
论文摘要
掺杂的ASNO3（A = BA，SR）由于其较大的光带隙和相对较高的电子迁移率，因此具有巨大的透明氧化物半导体潜力。 BA1-XSRXSNO3实溶液的带隙从3.2 eV（basno3）增加到4.6 eV（srsno3）。但是，带隙的增加伴随着电导率的降低。电性能变化的多功能性并不是微不足道的，并且性能优化是具有挑战性的。在这里，我们提出了一个简单的度量标准，用于量化ASNO3的传输特性。我们研究了BA1-XSRXSNO3实心溶液膜的电子/热传输性能及其与晶格失真的关系。结果表明，BA1-XSRXSNO3的所有转运性能都由晶格失真主导。这种现象归因于SNO6八面体的扭曲，该扭曲包括传导带。
La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties are not trivial, and the property optimization has been challenging. Here we propose a simple metric for quantifying the transport properties of ASnO3. We investigated the electron/thermal transport properties of Ba1-xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that the all transport properties of Ba1-xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists the conduction band.
