论文标题

硅纳米膜中的三维声子种群各向异性

Three-dimensional phonon population anisotropy in silicon nanomembranes

论文作者

McElhinny, Kyle M., Gopalakrishnan, Gokul, Holt, Martin V., Czaplewski, David A., Evans, Paul G.

论文摘要

由于晶体的截断,纳米级单晶具有改良的声子分散体。表面的引入改变了相对于散装的声子的种群,并引入了因翻译对称性的破坏而引起的各向异性。这种修饰也存在于整个布里渊区,即使在具有几种纳米尺寸的结构中,也对振动特性的表征构成了挑战,并在预测纳米材料的热,光学和电子特性方面导致了不确定性。同步加速器X射线热弥散散射研究发现,厚度高至21 nm的厚度的独立式SI纳米膜比散装硅的散射强度更高。另外,与相应的面内方向相比,这些膜的有限厚度产生的各向异性沿膜表面正常的相互空间方向产生特别强烈的散射。这些结果揭示了基于散装声子分散的材料特性和设备特性计算的维度,需要考虑晶体的纳米级尺寸。

Nanoscale single-crystals possess modified phonon dispersions due to the truncation of the crystal. The introduction of surfaces alters the population of phonons relative to the bulk and introduces anisotropy arising from the breaking of translational symmetry. Such modifications exist throughout the Brillouin zone, even in structures with dimensions of several nanometers, posing a challenge to the characterization of vibrational properties and leading to uncertainty in predicting the thermal, optical, and electronic properties of nanomaterials. Synchrotron x-ray thermal diffuse scattering studies find that freestanding Si nanomembranes with thicknesses as large as 21 nm exhibit a higher scattering intensity per unit thickness than bulk silicon. In addition, the anisotropy arising from the finite thickness of these membranes produces particularly intense scattering along reciprocal-space directions normal to the membrane surface compared to corresponding in-plane directions. These results reveal the dimensions at which calculations of materials properties and device characteristics based on bulk phonon dispersions require consideration of the nanoscale size of the crystal.

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