论文标题
石墨烯异质结光二极管的电容 - 电压（C-V）表征
Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes
论文作者
论文摘要
二维（2D）和三维（3D）材料的异质结构形成了有效的设备，用于利用两类材料的性质。石墨烯/硅（g/si）Schottky二极管已经相对于其光电特性进行了广泛的研究。在这里，我们介绍了一种分析与G/Si Schottky二极管的测得的电容 - 电压数据，该数据与G/硅二氧化硅/SI（GIS）电容器并联。我们还证明了内置电势（$φ$$ _ {bi} $）的准确提取和从与Richardson Constant无关的测量数据中的Schottky屏障高度。
Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($Φ$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant.
