论文标题
在1550 nm波长处的大面积微密层摩西单光子探测器
Large-area microwire MoSi single-photon detectors at 1550 nm wavelength
论文作者
论文摘要
我们在1550 nm波长的情况下证明了饱和的内部检测效率，用于蜿蜒形状的超导纳米电击单光子检测器，由3 nm厚的Mosi膜制成，宽度为1和3 $ $ $ $，高达400 x 400 x 400 x 400 $ $ $ $ $^2 $。尽管发夹转弯和设备上的大量正方形（最高$ 10^4 $），但在开关电流的99％处，深色计数速率为〜10 $^3 $ cps。该值比最近对具有分流电阻的短MOSI设备报告的结果低两个数量级。我们还发现，具有相同几何形状的5 nm厚的MOSI探测器对单个近红外光子不敏感，这可能与超导顺序参数的不同水平抑制有关。但是，我们在3 nm厚的MOSI设备上获得的结果与动力学方程方法框架的预测非常吻合。
We demonstrate saturated internal detection efficiency at 1550 nm wavelengths for meander-shaped superconducting nanowire single-photon detectors made of 3 nm thick MoSi films with widths of 1 and 3 $μm$, and active areas up to 400 by 400 $μm^2$. Despite hairpin turns and a large number of squares (up to $10^4$) in the device, the dark count rate was measured to be ~10$^3$ cps at 99% of the switching current. This value is about two orders of magnitude lower than results reported recently for short MoSi devices with shunt resistors. We also found that 5 nm thick MoSi detectors with the same geometry were insensitive to single near-infrared photons, which may be associated with different levels of suppression of the superconducting order parameter. However, our results obtained on 3 nm thick MoSi devices are in a good agreement with predictions in the frame of a kinetic-equation approach.
