论文标题
质子运输熵增加无定形SIO $ _2 $
Proton Transport Entropy Increase In Amorphous SiO$_2$
论文作者
论文摘要
本文介绍了绿色功能的经典热力学计算，该计算描述了熵生长的下降，因为质子在施加的电场下通过无定形的SIO $ _2 $层在MOS场效应器件门氧化物中移动。分析基于McLean and Ausman（1977）以及Brown and Saks（1991）的工作。介绍了基于麦克莱恩和奥斯曼的插值表I的拟合参数的多项式模型db/d $ a $ _0 $，y $ _0 $和a/y $ _0 $。引入了针对参数DB/D $α$的无限边界条件。多项式表示为db/d $α$，y $ _0 $，a/y $ _0 $，绿色功能作为分散参数$α$的功能。该论文表明，参数y $ _0 $和a/y $ _0 $几乎是圆锥形部分，小残留物为几％。这项工作旨在作为迈向接近平衡的热力学连续时间随机步行（CTRW）模型（异常扩散）的损害，该模型通过太空辐射效应（例如在Jovian辐射带中发现的损伤）。无定形二氧化硅电绝缘体中的电荷传输是通过热活化的隧道来进行的，而不是布朗运动。
This paper presents a classical thermodynamic calculation of a Greens function that describes the declining rate of entropy growth as protons move under an applied electric field, through an amorphous SiO$_2$ layer in a MOS field-effect device gate oxide. The analysis builds on work by McLean and Ausman (1977) and Brown and Saks (1991). Polynomial models of fitting parameters dB/d$α$, y$_0$, and A/y$_0$ based on interpolation TABLE I of McLean and Ausman are presented. Infinite boundary conditions are introduced for the parameter dB/d$α$. Polynomial representations are shown of dB/d$α$, y$_0$, A/y$_0$ and the Greens function as a function of the dispersion parameter $α$. The paper shows that parameters y$_0$ and A/y$_0$ are nearly conic sections with small residuals of a few percent. This work is intended as a first step toward a near-equilibrium thermodynamic continuous-time random walk (CTRW) model (anomalous diffusion) of damage introduced into thick-oxide silicon-based powerMOS parts by space radiation effects such as those found in the Jovian radiation belts. Charge transport in amorphous silica electrical insulators is by thermally activated tunneling, not Brownian motion.
