论文标题
Ultrathin PDSE2背门晶体管中的现场发射
Field emission in ultrathin PdSe2 back-gated transistors
论文作者
论文摘要
我们研究了带有超薄钯（PDSE2）通道的后栅场效应晶体管中的电运输。这些设备通常是在线，在低压下表现出显性的N型传导。电子传导与锋利的边缘结合，工作功能随层的数量减少，为PDSE2纳米片在真空电子中的应用开辟了道路。在这项工作中，我们展示了从几层PDSE2纳米片的场发射，电流一直延伸至100 v/um以下的UA和转交场，从而扩展了这种最近隔离的五角大楼分层材料的大量应用。
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.
