论文标题
电荷屏障高度对带有无定形的接触胶锗（GE）检测器的影响，用于轻质暗物质
The Impact of the Charge Barrier Height on Germanium (Ge) Detectors with Amorphous-Ge Contacts for Light Dark Matter Searches
论文作者
论文摘要
在搜索轻度暗物质（LDM）至MEV量表时，需要具有测量单电子孔（E-H）对的能力的锗（GE）探测器。我们研究了具有无形GE（A-GE）接触的GE检测器的可行性，以实现测量单个E-H对的灵敏度，这需要极低的泄漏电流。带有A-GE接触的三个GE检测器用于研究阻断电子和孔的电荷屏障高度。使用测量的散装泄漏电流和D $ \ ddot {O} $ hler-brodsky模型，我们分别获得了电荷屏障高度的值和顶部和底部接触的费米能水平附近的局部能量状态的密度。我们预测，散装泄漏电流非常小，可以在氦气温度（$ \ sim $ 4 K）下忽略。因此，具有A-GE接触的GE检测器具有测量单个E-H对检测LDM颗粒的潜力。
Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the D$\ddot{o}$hler-Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ($\sim$4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e-h pair for detecting LDM particles.
