论文标题
一个简单的模型,用于缺陷的半身系统中的空置顺序和障碍
A simple model for vacancy order and disorder in defective half-Heusler systems
论文作者
论文摘要
有缺陷的半身系统X(1-X)Yz具有大量内在空缺,例如NB(1-X)COSB,Ti(1-X)NISB和V(1-X)COSB,是一组有希望的热电材料。即使有较高的空缺浓度,它们仍保持平均半身晶体结构。这些系统显示出高电导率,但由有序的YZ晶格产生的高热电导率低,该晶状体导致电子,而X Sublattice上的大量空缺有效地散布了声子。最近,人们观察到,除了平均立方半手结构的布拉格衍射外,这些样品中的一些显示出广泛的散射散射,表明空位短,而其他样品则显示出急剧的额外峰,表明远距离空缺顺序。在这里,我们证明可以使用相同的简单模型来解释短期和远程排序,该模型假设X-Sublattice上的空缺相互避免。显示长距离空缺顺序的样品与模型的预测地面一致,而短距离样品则是系统的高温状态。先前的一项研究表明,样品化学计量学的变化会影响是否获得短距离空缺结构,但目前的模型表明样品的热处理应允许控制空位阶的程度,从而导致电导率,从而没有组成的变化。这很重要,因为该组合物还决定了电载体的量。独立控制电载体浓度和空置序列程度,应允许进一步改善这些系统的热电性能。
Defective half-Heusler systems X(1-x)YZ with large amounts of intrinsic vacancies, such as Nb(1-x)CoSb, Ti(1-x)NiSb and V(1-x)CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ lattice, which conducts electrons, while the large amounts of vacancies on the X sublattice effectively scatters phonons. Using electron scattering it was recently observed that in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order while other samples show sharp additional peaks, indicating long-range vacancy ordering. Here we show that both the short and long-range ordering can be explained using the same simple model, which assumes that vacancies on the X-sublattice avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground-state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.