论文标题
在硅硅拓扑和微不足道的限制中持续的电流
Persistent currents in topological and trivial confinement in silicene
论文作者
论文摘要
我们认为状态绑定在弯曲硅的电场翻转上。沿着电倾线线形成了拓扑限制，并以电荷电流的方向和由山谷指数确定的磁偶极矩的方向形成。我们将拓扑限制与由于垂直电场的局部减少而没有能量间隙反转的拓扑限制。对于后者，山谷不能保护磁偶极矩的方向免受外部磁场的反转。我们证明，拓扑限制的状态可以将其搭配并形成延伸的粘结或抗抗轨道，并与受几何形状和外部磁场影响的能量分裂。
We consider states bound at the flip of the electric field in buckled silicene. Along the electric flip lines a topological confinement is formed with the orientation of the charge current and the resulting magnetic dipole moment determined by the valley index. We compare the topological confinement to the trivial one that is due to a local reduction of the vertical electric field but without energy gap inversion. For the latter the valley does not protect the orientation of the magnetic dipole moment from inversion by external magnetic field. We demonstrate that the topologically confined states can couple and form extended bonding or antibonding orbitals with the energy splitting influenced by the geometry and the external magnetic field.
