论文标题
封装的单层石墨烯设备中的非凡磁场
Extraordinary magnetoresistance in encapsulated monolayer graphene devices
论文作者
论文摘要
我们报告了一项概念验证研究，该研究对六角形硝化硼的单层石墨烯设备中的非凡磁力耐药性（EMR），具有金属边缘触点和中央金属分流。非常大的EMR值，$ MR =（r（b）-r_0） / r_0 \ sim 10^5 $，部分是因为$ r_0 $接近或乘坐零作为门电压的函数，超过了高移动性散装式半导体设备中实现的。我们强调了灵敏度$ DR/DB $，在两端测量中，EMR设备迄今已报告最高，尤其是超过基于石墨烯的设备的先前结果，高达20数。
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0) / R_0\sim 10^5$, are achieved in part because $R_0$ approaches or crosses zero as a function of the gate voltage, exceeding that achieved in high mobility bulk semiconductor devices. We highlight the sensitivity, $dR/dB$, which in two-terminal measurements is the highest yet reported for EMR devices, and in particular exceeds prior results in graphene-based devices by a factor of 20. An asymmetry in the zero-field transport is traced to the presence of $pn$-junctions at the graphene-metal shunt interface.
