论文标题
确定雪崩故障电压的新方法
New method for determining avalanche breakdown voltage of silicon photomultipliers
论文作者
论文摘要
考虑了硅P-N结的雪崩故障和盖策模式。提出了一种精确的有力动力的方法，用于确定硅光电层面（SI PM）的雪崩故障电压。该方法基于测量当将一种类型的载体（电子或孔）注入P-N交界处的雪崩繁殖区时，相对光子检测效率（PDER）对偏置电压的依赖性。使用短波或长波光进行SI PM半导体结构的基本区域的电子或孔。在低压（1-2 V）下，检测效率是线性取决于偏置电压的；因此，外推到零PDER值可以在几毫伏内准确地确定SI PM雪崩故障电压。
The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (Si PM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the Si PM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the Si PM avalanche breakdown voltage with an accuracy within a few millivolts.
