论文标题
Moiré电位,晶格波纹和带隙空间变化,无扭曲的MOS2/MOTE2 HETEROBILAYER
Moiré potential, lattice corrugation, and band gap spatial variation in a twist-free MoS2/MoTe2 heterobilayer
论文作者
论文摘要
为了在过渡金属二色元中对Moiré模式进行完全的起来描述,我们进行了密度功能理论的计算,对单层原子注册和晶格波纹进行了计算,并在Mote2(9*9)/MOS2(10*10*10*10)系统上进行了超级尺寸,而不是超级尺寸的,而不是单层的晶格波纹。模型处理。我们发现,双层中部平面中的局部电位显示出明显的莫伊尔模式。它进一步使我们揭示了MOTE2和MOS2层中Mo Atoms附近平均局部电位的变化,这使得Moiré的电势。它们是相互调制的结果,并直接与价带最大值和传导带的空间变化相关。层间电位定义为两个内部莫伊尔电位之间的差异,其深度为0.11 eV,并且与Moiré细胞中的带隙变化大致变化,Moiré细胞的振幅为0.04 eV。我们发现晶格波纹在MoTe2(0.30Å)和MOS2(0.77Å)层中都显着,但其对电子特性的影响是边际的。 MOTE2/MOS2双层的皱纹使本地频段间隙的空间变化增加了5 MeV,而其对全球频段隙的影响在1 MEV之内。提出了一个简单的内部耦合模型,以了解带隙的Moiré电位和空间变化的相关性。
To have a fully ab initio description of the Moiré pattern in a transition metal dichalcogenide heterobilayer, we have carried out density functional theory calculations, taking accounts of both atomic registry in and the lattice corrugation out of the monolayers, on a MoTe2(9*9)/MoS2(10*10) system which has a moderate size of superlattice larger than an exciton yet not large enough to justify a continuum model treatment. We find that the local potential in the midplane of the bilayer displays a conspicuous Moiré pattern. It further leads us to reveal that the variation of the average local potential near Mo atoms in both MoTe2 and MoS2 layers make intralayer Moiré potentials. They are the result of mutual modulation and correlate directly with the spatial variation of the valence band maximum and conduction band minimum. The interlayer Moiré potential, defined as the difference between the two intralayer Moiré potentials, has a depth of 0.11 eV and changes roughly in proportion to the band gap variation in the Moiré cell, which has an amplitude of 0.04 eV. We find the lattice corrugation is significant in both MoTe2 (0.30Å) and MoS2 (0.77Å) layers, yet its effect on the electronic properties is marginal. The wrinkling of the MoTe2/MoS2 bilayer enhances the spatial variation of the local band gap by 5 meV, while its influence on the global band gap is within 1 meV. A simple intralayer band-coupling model is proposed to understand the correlation of Moiré potential and spatial variation of the band gap.