论文标题

fe $ _ {1-x} $ ga $ _x $薄膜的磁性耐药性呈现条纹磁性模式:闭合域和域墙的作用

Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls

论文作者

Pianciola, B., Flewett, S., De Biasi, E., Hepburn, C., Lounis, L., Vásquez-Mansilla, M., Granada, M., Barturen, M., Eddrief, M., Sacchi, M., Marangolo, M., Milano, J.

论文摘要

在这项工作中,我们显示了Fe $ _ {1-x} $ ga $ _x $薄膜中的封闭域的存在,具有条纹磁性模式,并研究了磁性域布置对磁磁管属性的影响。通过X射线谐振磁散射,我们在实验上证明了这种闭合结构域的存在,并估计其大小以及对表面磁化的相对贡献。磁转运实验表明,磁路阻力的行为取决于测量几何以及温度。当电流垂直于条纹方向时,当在所有研究的温度范围内沿磁场沿磁场施加磁场时,电阻率会降低,并且计算表明主源是各向异性磁磁磁度。在电流与条纹域平行的流动流动的情况下,磁场固定性变化符号,在室温下为正,在100 k处为负。为了解释这种行为,除了各向异性外,还必须考虑对域壁对磁极的贡献。

In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the stripe direction, the resistivity decreases when a magnetic field is applied along the stripe direction (negative magnetoresistance) in all the studied temperature range, and the calculations indicate that the main source is the anisotropic magnetoresistance. In the case of current flowing parallel to the stripe domains, the magnetoresistance changes sign, being positive at room temperature and negative at 100 K. To explain this behavior, the contribution to magnetoresistance from the domain walls must be considered besides the anisotropic one.

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