论文标题
在低电流密度下以$λ\ $ 1330NM GAILASP发光二极管控制SRH抑制的掺杂剂概况
Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes
论文作者
论文摘要
通过调整掺杂剂的空间剖面以抑制震荡的读取台（SRH）重组，可以在低电流密度下显着提高双杂音点发光二极管（LED）的量子效率。为了证明这种效果，我们使用非常规的掺杂剂轮廓来建模，设计，成长，制造和测试GainAsp LED（$λ\ $ 1330nm）。与我们的控制设计相比，这是一种常规的$ n^+$ - $ n $ - $ p^+$ $ $ $ $ $ $ $ $ $ - $ $ n $ - $ n $ - $ n $ -p^+$ p^+$ $ p^+$ hetero hetero screnture the New Design的结构以抑制J02太空重组电流的方式将内置电场取代。该设计原则将其推广到其他材料系统，并且可以适用于在实用功率密度下观察和利用电发光的制冷的努力。
The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED ($λ\approx$ 1330nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional $n^+$-$n$-$p^+$ double hetero-junction LED, the dopant profile near the $n$-$p^+$ hetero-structure of the new design displaces the built-in electric field in such a way as to suppress the J02 space charge recombination current. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.
