论文标题
$π$在拓扑绝缘子中霍尔振荡与SDH振荡与非琐碎浆果相之间的相位差
$π$ phase difference between Hall oscillation and SdH oscillation and non trivial Berry Phase in a topological insulator
论文作者
论文摘要
量子振荡是通过电气传输检测拓扑绝缘体(Ti)表面状态的重要探针,因为Shubnikov-de HAAS振荡允许提取浆果相,这是检测拓扑表面状态的关键测试。在这里,我们提取了1 $ \%$ sn掺杂的strong ti $ sb_2te_2se $的非小浆果阶段。我们也观察到霍尔电阻的振荡,并表明这并不是由于SDH在Hall数据上的优势而引起的,也不是量子Hall效应的前体,而是由于费米水平的固定而发生的。同样,HALL振荡与SDH振荡的恰好具有180 $^\ Circ $相位差,并且这种相移独立于磁场强度。有人认为,这种不寻常的现象源于兰道水平散射在Landau水平散射上的占主导地位,这取决于散射潜力的强度。因此,我们的工作铺平了通过量子振荡理解散射物理的方式。
The quantum oscillation is an important probe for the detection of a topological insulator(TI) surface states by means of electrical transport since the Shubnikov-de Haas oscillations allow to extract the Berry Phase which is the key test to detect the topological surface states. Here we have extracted the non trivial Berry Phase of 1$\%$ Sn doped strong TI $Sb_2Te_2Se$. We observed oscillation in Hall resistance as well and showed that this does not arise neither from the dominance of the SdH on Hall data nor this is the precursor of quantum Hall effect, rather this happens due to the pinning of the Fermi Level. Also The Hall oscillation has exactly 180$^\circ$ phase difference from SdH oscillation and this phase shift is independent of the magnetic field strength. It is argued that this unusual phenomenon stems from the predominance of the intra Landau Level scattering over the inter Landau Level scattering and it depends on the strength of the scattering potential. Thus our work paves the way of understanding the physics of scattering via quantum oscillations.