论文标题
四面体协调半导体的现场效应诱导的超导性：（111）氢化硅的情况
Field-effect induced superconductivity in surfaces of tetrahedrally coordinated semiconductors: the case of (111) hydrogenated silicon
论文作者
论文摘要
我们表明，通过以场效应（FET）为例，以氢化（111）硅表面诱导四面体配位半导体中诱导超导相变的可能性。我们通过考虑应用的电场和诱导的电荷密度来执行系统在适当的FET几何形状中的电子和振动特性的密度功能理论计算。使用$ Q =γ$的简化超导模型和McMillan/Allen-dynes公式，我们获得了超导临界温度的估计。我们观察到，通过在$ n_ {dop} = 6 \ cdot10^{14} $ cm $ $^{ - 2} $上大量掺杂孔，我们获得了$λ_{si} = 0.98 $的电子 - 偶联常数$ t _ {\ text {c}}} \在[8.94; 10.91] $ k中，在[0.08; 0.12] $中$μ^*\。
We show the possibility of inducing a superconductive phase transition in tetrahedrally coordinated semiconductors via field-effect (FET) doping by taking as an example the hydrogenated (111) silicon surface. We perform density functional theory computations of the electronic and vibrational properties of the system in the proper FET geometry, by taking into account the applied electric field and the induced charge density. Using a simplified superconductive model at $q=Γ$ and the McMillan/Allen-Dynes formula, we get an estimate of the superconductive critical temperature. We observe that, by heavily doping with holes at $n_{dop}=6\cdot10^{14}$ cm$^{-2}$, we get an electron-phonon coupling constant of $λ_{Si}=0.98$ and a superconductive phase transition at $T_{\text{c}}\in[8.94;10.91]$ K, with $μ^*\in[0.08;0.12]$.
