论文标题

通过控制阴离子空缺的单晶B1 VNX陶瓷中的自适应硬且坚硬的机械响应

Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies

论文作者

Mei, A. B., Kindlund, H., Broitman, E., Hultman, L., Petrov, I., Greene, J. E., Sangiovanni, D. G.

论文摘要

高硬度和韧性通常被认为是单晶陶瓷的相互排斥特性。在室温下将实验和摘要分子动力学(AIMD)原子模拟结合在一起,我们证明了单晶NaCl结构VNX/MGO(001)薄膜的硬度和韧性都可以通过掺入阴离子空位来增强。纳米引导结果表明,这里认为是代表性的介体VNX系统的VN0.8比化学计量计的VN样品更难〜20%,并且对骨折的耐药性更大。经受[001]和[110]伸长的VN和VN0.8的AIMD建模表明,两种材料的拉伸强度相似。然而,尽管化学计量VN相在拉伸屈服点以脆性的方式裂解,但经过插入的化合物会激活散发积累的应力的转化解决机制。 AIMD模拟还表明,VN0.8对{110} <1-10>和{111} <1-10>剪切变形的抗抗性最初具有更大的阻力。但是,为了逐步增加剪切菌株,VN0.8机械行为逐渐从硬延伸到延展性比VN发展。过渡是由阴离子空位介导的,该空位促进{110} <1-10>和{111} <1-10>晶格滑移,通过将激活剪切应力减少多达35%。电子结构分析表明,VN0.8的两场硬/坚硬的机械响应主要源于其固有能力,它可以在第二个邻居和第4个邻居(即跨空位点)V-V金属状态之间传递D电子。我们的工作为硬材料的电子结构设计提供了一条途径,其中塑料机械响应带有负载。

High hardness and toughness are generally considered mutually exclusive properties for single-crystal ceramics. Combining experiments and ab initio molecular dynamics (AIMD) atomistic simulations at room temperature, we demonstrate that both the hardness and toughness of single-crystal NaCl-structure VNx/MgO(001) thin films are simultaneously enhanced through the incorporation of anion vacancies. Nanoindentation results show that VN0.8, here considered as representative understoichiometric VNx system, is ~20% harder, as well as more resistant to fracture than stoichiometric VN samples. AIMD modeling of VN and VN0.8 supercells subjected to [001] and [110] elongation reveal that the tensile strengths of the two materials are similar. Nevertheless, while the stoichiometric VN phase systematically cleaves in a brittle manner at tensile yield points, the understoichiometric compound activates transformation-toughening mechanisms that dissipate accumulated stresses. AIMD simulations also show that VN0.8 exhibits an initially greater resistance to both {110}<1-10> and {111}<1-10> shear deformation than VN. However, for progressively increasing shear strains, the VN0.8 mechanical behavior gradually evolves from harder to more ductile than VN. The transition is mediated by anion vacancies, which facilitate {110}<1-10> and {111}<1-10> lattice slip by reducing activation shear stresses by as much as 35%. Electronic-structure analyses show that the two-regime hard/tough mechanical response of VN0.8 primarily stems from its intrinsic ability to transfer d electrons between 2nd-neighbor and 4th-neighbor (i.e., across vacancy sites) V-V metallic states. Our work offers a route for electronic-structure design of hard materials in which a plastic mechanical response is triggered with loading.

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