论文标题

单量子点加热阀

A Single-Quantum-Dot Heat Valve

论文作者

Dutta, B., Majidi, D., Talarico, N. W., Gullo, N. Lo, Winkelmann, C. B., Courtois, H.

论文摘要

我们展示了热偏置的单量子点连接中电子热流的栅极控制。在连接处附近拍摄的电子温度图作为栅极的函数和施加在设备上的偏置电压的函数,揭示了明确定义的库仑钻石图案,该图案揭示了在电荷退化点处的最大热传递。该热阀的非平凡偏置和栅极依赖性均来自设备中心的量子性质及其与引线的强耦合。

We demonstrate gate control of electronic heat flow in a thermally-biased single-quantum-dot junction. Electron temperature maps taken in the immediate vicinity of the junction, as a function of the gate and bias voltages applied to the device, reveal clearly defined Coulomb diamond patterns revealing a maximum heat transfer right at the charge degeneracy point. The non-trivial bias and gate dependence of this heat valve results from both the quantum nature of the dot at the heart of device and its strong coupling to leads.

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