论文标题
BE在硝酸盐中的扩散：实验和建模
Diffusion of Be in gallium nitride: Experiment and modelling
论文作者
论文摘要
通过分析从无限来源分析温度依赖性扩散谱，研究了铍在氮化碳中的扩散机理。将铍原子植入了高结构质量氮化壳层，该层在氮化氨基壳底物上通过卤化物蒸气相结晶。在高氮气压力下，在不同温度，1000°C至1400°C之间进行植入后退火。通过次级离子质谱法分析了在植入和退火的样品中分析铍谱。结果表明，掺杂剂的扩散是由于两种机制的组合而产生的：快速的间隙和缓慢的间质 - 底座扩散。确定了两个扩散路径的指数前因子和激活能。此外，从铍深度剖面的特征中，计算出镀和在间质位置处的镀和铍的形成能，并将其与理论值进行了比较。
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.
