论文标题
混合MOS 2 -p3HT半导体层的薄膜晶体管电性能
Thin-film transistor electrical performance of hybrid MoS 2 -P3HT semiconductor layers
论文作者
论文摘要
与仅P3HT的TFT相比，发现杂化钼二硫化物（MOS2）纳米颗粒的纳米颗粒的纳米颗粒的迁移率可得到增强，该纳米颗粒被发现增强。发现孔电荷转运的改进是P3HT中MOS2浓度的函数，MOS2浓度较高，导致设备的电流增加。此外，AU的工作功能高5.1 eV，这是 适用于P3HT的同性恋水平。我们发现MOS2和 AU具有适当的能量水平，用于孔运输和注入。
The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in the hole charge transport was found to be a function of the concentration of MoS2 in P3HT with high MoS2 concentrations resulting in an increase in the on-current of the device. Moreover, Au has a high work function of 5.1 eV which is suitable with the HOMO level of P3HT. We find that MoS2 and Au have the proper energy level for hole transport and injection.
