论文标题
在掺杂的WSE2半导体中，远程磁顺序的栅极调制
Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor
论文作者
论文摘要
我们使用Ab始于从头算计算，证明了p型V型WSE2单层中远程磁性顺序的栅极可调性。我们发现，在低V兴奋剂浓度极限下，通过增加孔密度来增强远程铁磁顺序。 In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration.孔介导的远距离磁交换为〜70 MeV，因此强烈暗示在室温下V型WSE2中的铁磁磁性。 Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.
We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.
