论文标题
CE3+和Pr3+掺杂的lutetium pyrosilication闪烁体晶体中的电子和孔捕获
Electron and hole trapping in the Ce3+ and Pr3+ doped lutetium pyrosilicate scintillator crystals studied by electron paramagnetic resonance
论文作者
论文摘要
通过电子顺磁共振(EPR)研究了在CE3+和PR3+掺杂的LU2SI2O7闪烁(LPS:CE和LPS:PR)中的电子和孔捕获。 X射线照射的LPS晶体的详细EPR测量表明,辐射产生的孔主要被困在产生O-中心的氧晶格离子上。相同的X射线照射还会产生电子类型中心,该中心归因于Lu2+离子,其中Lu Lattice离子的捕获的电子被附近的缺陷稳定,例如氧空位和IR3+杂质离子。因此,孔中心和电子中心都可以被视为绑定的小极性子,这使闪烁机构中的电荷捕获非常有竞争力。孔O-和电子LU2+中心显示出高于室温的热稳定性。它们浓度的热衰变与在470-550 K处的热刺激发光发光峰的外观非常相关。CE中存在相同的内在陷阱和PR掺杂的LPS晶体表明,这些晶体的光屈服差异是CE3+和PR3+活化剂中心中LPS Lattices lattice lattices lattice lattice lattice latters latters lattices latt latters的内在特性。将电荷陷阱起源于这种硫化结构及其在闪烁机制中的作用与原智文献中先前描述的结果进行了比较。
Electron and hole trapping was studied in the Ce3+ and Pr3+ doped Lu2Si2O7 scintillation single crystals (LPS:Ce and LPS:Pr) by Electron Paramagnetic Resonance (EPR). Detailed EPR measurements of the X-ray irradiated LPS crystals revealed that holes generated by irradiation are predominantly trapped at oxygen lattice ions creating O- centers. The same X-ray irradiation creates also electron type centers which were attributed to Lu2+ ions, where the trapped electron at Lu lattice ion is stabilized by a defect nearby, such as oxygen vacancy and Ir3+ impurity ion. Both the hole and electron centers can be thus considered as a bound small polarons, which makes the charge trapping in scintillation mechanism quite competitive. The hole O- and electron Lu2+ centers show thermal stability well above room temperature. The thermal decays of their concentrations correlate well with the appearance of the thermally stimulated luminescence glow peaks at 470-550 K. The presence of the same intrinsic traps in the Ce and Pr doped LPS crystals suggests that difference in the light yield of these crystals is an intrinsic property of the Ce3+ and Pr3+ activator centers in LPS lattice. Charge traps origin in this pyrosilicate structure and their role in scintillation mechanism is compared with the results previously described in literature in orthosilicates.