论文标题
新设计的Fe/Zno/Mgo/Fe磁性隧道连接处的Terahertz Wave的纠正性能估计
Estimation of Rectifying Performance for Terahertz Wave in Newly Designed Fe/ZnO/MgO/Fe Magnetic Tunnel Junction
论文作者
论文摘要
我们制造了具有低连接阻力区域产品（几种$ω$ $ $ $ $ $ m $^2 $）的完全外部外观FE/ZnO/MGO/Fe磁性隧道连接（MTJS），并进行了Terahertz电子电波的平方低整流性能的理论估计。在室温下，在零偏置电压条件下，在1 THz处最高为0.09 A/W的有效电流响应性。结果大约是在类似条件下进行的半导体二极管实验获得的最佳结果值的一半。该研究强烈表明，该MTJ系统具有巨大的Terahertz波的整流元件的潜力。
We fabricated fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with low junction resistance-area products (several $Ω$ $μ$m$^2$) and conducted a theoretical estimation of square-low rectifying performance for a terahertz electromagnetic wave. Effective current responsivity up to 0.09 A/W at 1 THz was obtained under zero-bias voltage condition at room temperature. The result is approximately half the value of the best result obtained for experiments in semiconductor-based diodes, performed under similar conditions. The study strongly suggests that this MTJ system has a great potential for the rectifying element of the terahertz wave.
