论文标题
研究LSST ITL传感器中的递延电荷效应
Investigation of Deferred Charge Effects in LSST ITL Sensors
论文作者
论文摘要
电荷转移效率低下（CTI）的传统表征在电荷耦合设备（CCD）中可能患有多种缺陷：CTI通常仅针对有限的信号水平计算，CTI通常是根据有限的像素来计算的，并且通常假定CTI的源通常在每个像素到像素的源中发生。在成像技术实验室（ITL）开发的CCD的初步测试期间，已经确定了许多串行CTI效应，用于用于大型Synoptic调查望远镜（LSST）摄像机焦平面，这些镜头平面激发了传统CTI表征以外的其他研究。这项研究描述了对串行递延电荷效应的更详细检查，以便充分表征这些传感器的串行过扫描像素中测得的递延电荷。结果表明，除了在每个像素转移处发生比例CTI损失外，ITL CCD还对在串行过量过量像素中测得的递延电荷有其他贡献，这可能是由于电荷捕获而引起的固定CTI损失以及高信号时的电子偏移漂移。
The traditional characterization of charge transfer inefficiency (CTI) in charge-coupled devices (CCDs) can suffer from a number of deficiencies: CTI is often only calculated for a limited number of signal levels, CTI is calculated from a limited number of pixels, and the sources of CTI are usually assumed to occur at every pixel-to-pixel transfer. A number of serial CTI effects have been identified during preliminary testing of CCDs developed by Imaging Technology Laboratory (ITL) for use in the Large Synoptic Survey Telescope (LSST) camera focal plane that motivate additional study beyond the traditional CTI characterization. This study describes a more detailed examination of the serial deferred charge effects in order to fully characterize the deferred charge measured in the serial overscan pixels of these sensors. The results indicate that in addition to proportional CTI loss that occurs at each pixel transfer, ITL CCDs have additional contributions to the deferred charge measured in serial overscan pixels, likely caused by fixed CTI loss due to charge trapping, and an electronic offset drift at high signal.
