论文标题
二维Mott材料的库仑工程
Coulomb Engineering of two-dimensional Mott materials
论文作者
论文摘要
二维材料可能会受到周围环境的强烈影响。介电环境筛选并减少二维材料中电子之间的库仑相互作用。由于在莫特材料中，库仑相互作用负责绝缘状态，因此操纵介电筛选可直接控制莫特内斯。我们的多体计算揭示了这种库仑工程的光谱指纹：我们证明了哈伯德频带位置的EV尺度变化，并显示了库仑工程的绝缘体到金属过渡。根据我们的原理计算，我们讨论了（可行的）条件，在这些条件下，我们可以通过实验实现莫特材料的库仑工程方案。
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
