论文标题
SRIRO3电影（110）dysco3的磁转运
Magnetotransport of SrIrO3 films on (110) DyScO3
论文作者
论文摘要
外延钙钛矿（110）面向的SRIRO3（SIO）薄膜是通过脉冲激光沉积在（110）方向的Dysco3（DSO）底物上生长的，具有各种膜厚度t（2 nm <t <50 nm）。所有薄膜均以化学计量的组成，正交相和高结晶度产生。 DSO相对于SIO和相同的对称的几乎完美的平面晶格匹配导致完全的外延内对齐，即DSO和SIO的C轴相互平行，仅D110略微放大的D110较大的平面晶格间距（+0.38％）由小型内部压缩构造而导致DSO构造由Plander plane plane plantrane引起的dso dso，这是由Plane plane plane的压缩量所引起的。沿磁场的测量值沿[001]和[1-10]方向进行电流和垂直于膜平面的磁场的[1-10]方向进行。 MR在两个方向上似乎都有明显不同。各向异性MR001/MR1-10> 1随着T的降低而增加，对于最薄的薄膜特别明显，同样在T* 〜3 K下方显示出滞后场的依赖性。强制性hc的强制性为2-5 t。相当于，T*和HC的磁性下降的温度和强度的均可均具有强大的作用。 Sio电影中的磁转运。
Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown by pulsed laser deposition on (110) oriented DyScO3 (DSO) substrates with various film thickness t (2 nm < t < 50 nm). All the films were produced with stoichiometric composition, orthorhombic phase, and with high crystallinity. The nearly perfect in-plane lattice matching of DSO with respect to SIO and same symmetry result in a full epitaxial inplane alignment, i.e., the c-axis of DSO and SIO are parallel to each other with only slightly enlarged d110 out-of-plane lattice spacing (+0.38%) due to the small in-plane compressive strain caused by the DSO substrate. Measurements of the magnetoresistance MR were carried out for current flow along the [001] and [1-10] direction of SIO and magnetic field perpendicular to the film plane. MR appears to be distinctly different for both directions. The anisotropy MR001/MR1-10 > 1 increases with decreasing T and is especially pronounced for the thinnest films, which likewise display a hysteretic field dependence below T* ~ 3 K. The coercive field Hc amounts to 2-5 T. Both, T* and Hc are very similar to the magnetic ordering temperature and coercivity of DSO which strongly suggests substrate-induced mechanism as a reason for the anisotropic magnetotransport in the SIO films.
