论文标题
由己二硼封装的石墨烯中的相称和不相称的双摩尔干扰
Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride
论文作者
论文摘要
通过六角硼硝化硼（BN）封装的石墨烯（G）的双摩尔模式的干扰可以改变一级/次级狄拉克点附近的电子结构特征，以及由单个G/bn moire模式引入的电子孔对称性，这取决于顶部/底部底部底部底层的相对堆叠布置。我们表明，在几乎对齐的bn/g/bn和bn/g/nb中发现了强大的干扰效应，并获得了与摩尔超级晶格扭曲角有关的状态密度的演变。在相等的摩尔期间，与$ δϕ = 0^{\ circ} $ modulo $ 60^{\ circ} $角度差异可以建设性地累加，从而导致大约$ \ sim 0.5 $ ev的大型假单，或者根据其相对滑动的相对滑动而取消取消，例如，相应的模式与$ δϕ = 0^{\ circ} $ modulo $ 60^{\ circ} $差异。部分恢复电子孔对称性。 $ δϕ = 30^{\ circ} $差异的moire Quasicrystals的电子结构揭示了几乎孤立的van Hove奇异性的密度的双Moire特征，我们可以期望有很强的相关性。
Interference of double moire patterns of graphene (G) encapsulated by hexagonal boron nitride (BN) can alter the electronic structure features near the primary/secondary Dirac points and the electron-hole symmetry introduced by a single G/BN moire pattern depending on the relative stacking arrangements of the top/bottom BN layers. We show that strong interference effects are found in nearly aligned BN/G/BN and BN/G/NB and obtain the evolution of the associated density of states as a function of moire superlattice twist angles. For equal moire periods and commensurate patterns with $Δϕ= 0^{\circ}$ modulo $60^{\circ}$ angle differences the patterns can add up constructively leading to large pseudogaps of about $\sim 0.5$ eV on the hole side or cancel out destructively depending on their relative sliding, e.g. partially recovering electron-hole symmetry. The electronic structure of moire quasicrystals for $Δϕ=30^{\circ}$ differences reveal double moire features in the density of states with almost isolated van Hove singularities where we can expect strong correlations.
